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Ideal Power Reports Semiconductor Fabricator Successfully Tested Its B-TRAN Technology

AUSTIN, TX--(Marketwired - Apr 18, 2016) - Ideal Power Inc. (NASDAQ: IPWR), a developer of innovative power conversion technologies, reported its semiconductor fabricator successfully tested Bi-Directional Bi-Polar Junction TRANsistor (B-TRAN™) silicon dies and test results validate key characteristics of the semiconductor power switch. The test results can be found in the company's updated B-TRAN White Paper. The results confirm central B-TRAN™ elements and operational modes are consistent with third party device simulations that predict significant performance and efficiency improvements over conventional power switches such as SCRs, IGBTs and MOSFETs.

Ideal Power currently has 12 issued and over 40 patents pending in the United States and abroad related to the B-TRAN™ device, which is a symmetric double-sided structure that presents unique opportunities for high current density operation at high efficiency. B-TRANs have potential uses in a wide range of power conversion and control applications, including very low loss AC power control and in power converters from Ideal Power and other power converter OEMs.

"This validation of key characteristics of the B-TRAN™ technology is a significant step forward in demonstrating B-TRAN's ability to improve energy efficiency across a wide range of products and applications," said Dr. Richard Blanchard, B-TRAN™ co-inventor and holder of over 200 patents primarily related to power semiconductors including the widely used trench MOSFET. "The device has tremendous implications for the power industry."

"These exciting results of the first tested B-TRAN™ structures validate key characteristics of the device and confirm our belief that B-TRANs can be a disruptive new force in many power conversion applications," said Bill Alexander, CTO of Ideal Power and co-inventor of the B-TRAN™. "The predicted extremely low forward voltage drop and fast, low loss switching of the B-TRAN™ are each approximately ten times better than conventional switches. B-TRAN's high current density and native bi-directional capability can lead to very high efficiency power control and conversion at very low cost points. We expect these anticipated efficiency improvements to translate to a substantial cost-performance advantage over current generation power semiconductor devices, which opens a multi-billion dollar market...